Nexperia
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Low Clamping Bidirectional ESD Protection Device for USB4 Standard Interfaces
Nexperia announced two PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD)… |
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Nexperia's Acquisition of UK's Largest Semiconductor Firm NWF, Put Under Review A huge geopolitical imperativeness has been gained by the semiconductor sector because the key technology has been targeted by China for the… |
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Nexperia Acquires UK's Largest Semiconductor Plant to Meet Manufacturing Demands
NWF has a total outstanding debt of £20 million with HSBC and £18 million with the Welsh government. … |
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Standard Logic Devices in Ultra-Compact DHXQFN Packages
Nexperia has developed small and low profile 14, 16, 20, and 24 pin DHXQFN packages to provide a small footprint in standard… |
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New Trench Schottky Rectifiers to Deliver High System Efficiency and Reduce Thermal Runaway Risk
The new Trench Schottky rectifiers from Nexperia are AEC-Q101 approved devices that combine low switching losses and increased… |
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High-Performing 4-channel ESD Protection Devices for High-Speed Interfaces in Automotive Applications
The new PESD4USBx series of high-performing 4-channel ESD protection devices by Nexperia offer ideal signal… |
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Low-cost 80 V Resistor-Equipped Transistors to Handle Spikes and Pulses in 48-V Automotive and Higher Voltage Circuits
Nexperia has released a family of space- and cost-saving 80-V resistor-equipped transistors (RETs) or digital transistors to… |
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Space Saving LED Drivers in Compact DFN Package with Side-Wettable Flanks for Automated Inspection and Improved Reliability
Nexperia has released a new range of AEC-Q101-qualified LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. The… |
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Automotive Qualified ESD Protection devices with High Signal Integrity, Low Clamping voltage, and High Surge Robustness
Nexperia has introduced four new AEC-Q101-qualified TrEOS ESD protection devices for automotive use. The new TrEOS components… |
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High Voltage GaN FET Devices in TO-247 and CCPAK SMD Package for Compact High-Efficiency Designs
Nexperia has introduced a new range of GaN FET devices that consists of next-gen high-voltage Gan HEMT H2 technology in both TO… |
