Nexperia has launched 16 new power MOSFETs in the copper-clip CCPAK1212 package, which includes both 80 V and 100 V variants. These components feature an innovative copper-clip design that enhances current conduction, reduces parasitic inductance, and provides excellent thermal performance. They are suitable for a range of applications, including motor control, power supplies, renewable energy systems, and AI server hot-swap functions. With options for top-side and bottom-side cooling, these MOSFETs deliver high power density and reliable operation in power-intensive environments.
The CCPAK1212 package gives low on-resistance, reduced parasitic inductances, and improved thermal performance. The benchmark PSMN1R0-100ASF, a 0.99 mΩ 100 V power MOSFET, achieves a conduction current of 460 A and a power dissipation of 1.55 kW, all within a compact 12 mm x 12 mm design. These features reduce the need for parallelism, simplifying designs and enabling more compact, cost-effective solutions.
For AI servers, application-specific MOSFETs (ASFETs) include an enhanced Safe Operating Area (SOA) for improved thermal stability during linear mode transitions. The devices are supported by JEDEC registration, advanced design tools, and interactive datasheets, including a “graph-to-csv” feature for data analysis. These tools streamline the design process and ensure compatibility for next-generation systems. Nexperia also plans to extend CCPAK1212 packaging across its automotive-qualified AEC-Q101 portfolio, catering to the evolving needs of high-performance applications.
